advanced power 2n and 2p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v low on-resistance r ds(on) 40m full bridge application on i d 4.3a lcd monitor inverter p-ch bv dss -30v r ds(on) 70m description i d -3.3a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 30 -30 v v gs gate-source voltage 12 12 v i d @t a =25 continuous drain current 3 4.3 -3.3 a i d @t a =70 continuous drain current 3 3.4 -2.6 a i dm pulsed drain current 1 20 -20 a p d @t a =25 total power dissipation 1.38 w linear derating factor 0.01 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a thermal resistance junction-ambient 3 max. 90 /w data and specifications subject to change without notice parameter 200920041 ap9932gm thermal data pb free plating product the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the so-8 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. n1g n1d/p1d n1s/n2s n2g p1g p1s/p2s n2d/p2d p2g so-8 n1g n1s p1g p1s p1n1d n2g n2s p2g p2s p2n2d
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.03 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 40 m v gs =4.5v, i d =4a - - 50 m v gs =2.5v, i d =2a - - 60 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - - v g fs forward transconductance v ds =5v, i d =4a - 13 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =12v - - 100 na q g total gate charge 2 i d =4a - 9 15 nc q gs gate-source charge v ds =24v - 1.6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time 2 v ds =15v - 8 - ns t r rise time i d =1a - 9 - ns t d(off) turn-off delay time r g =3.3 , v gs =5v - 17 - ns t f fall time r d =15 -5- ns c iss input capacitance v gs =0v - 630 1000 pf c oss output capacitance v ds =25v - 140 - pf c rss reverse transfer capacitance f=1.0mhz - 65 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time i s =4a, v gs =0v - 17 - ns q rr reverse recovery charge di/dt=100a/s - 9 - nc ap9932gm
ap9932gm p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 ,i d =-1ma - -0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4a - - 70 m v gs =-4.5v, i d =-3a - - 90 m v gs =-2.5v, i d =-2a - - 120 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - - v g fs forward transconductance v ds =-5v, i d =-3a - 8 - s i dss drain-source leakage current (t j =25 o c) v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =12v - - na q g total gate charge 2 i d =-3a - 10 16 nc q gs gate-source charge v ds =-24v - 2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3 - nc t d(on) turn-on delay time 2 v ds =-15v - 8 - ns t r rise time i d =-1a - 9 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-5v - 25 - ns t f fall time r d =15 -14- ns c iss input capacitance v gs =0v - 690 1100 pf c oss output capacitance v ds =-25v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-3a, v gs =0v - 25 - ns q rr reverse recovery charge di/dt=-100a/s - 20 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board , t < 10sec ; 186 /w when mounted on min. copper pad. 100
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature ap9932gm 0 3 6 9 12 15 18 21 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c v g =2.5v 10v 7.0v 5.0v 4.5v 0 3 6 9 12 15 18 21 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 5.0v 4.5v v g =2.5v 30 35 40 45 50 55 60 0246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =4a v g =4.5v 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
ap9932gm n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fi g 10. effective transient thermal im p edanc e fig 11. switching time waveform fig 12. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% 0 2 4 6 8 10 12 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4a v ds =24v 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 186 /w t t 0.02 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s d c t a =25 o c single pulse q v g 4.5v q gs q gd q g charge
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature ap9932gm 0 3 6 9 12 15 18 21 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) - 10v -7.0v -5.0v -4.5v v g = - 2.5v t a =25 o c 0 3 6 9 12 15 18 21 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) v g = - 2.5v -10v -7.0v -5.0v -4.5v t a =150 o c 55 65 75 85 95 0246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-2a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-3a v g = -4.5 v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
ap9932gm p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 5 10 15 20 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-3a v ds = - 24 v 10 100 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 186 /w t t 0.02 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse
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